Variability analysis of a graded-channel dual-material double-gate strained-silicon MOSFET with fixed charges
نویسندگان
چکیده
In this paper, variability analysis of a graded-channel dual-material (GCDM) double-gate (DG) strained-silicon (s-Si) MOSFET with fixed charges is analyzed using Sentaurus TCAD. By varying the different device parameters, proposed GCDM-DG s-Si respect to variations in threshold voltage, drain current, and short-channel effects as line edge roughness fluctuations random dopant, contact resistance, oxide thickness are considered. The results confirm that effect process severe when has at interface. Moreover, p-MOSFET less vulnerable roughness, thickness, dopants comparison n-MOSFET. Also, more reliable compared GC-DG from sources.
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ژورنال
عنوان ژورنال: Journal of Computational Electronics
سال: 2022
ISSN: ['1572-8137', '1569-8025']
DOI: https://doi.org/10.1007/s10825-021-01847-9